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dc.contributor.author | Baimukhanov, Zein | |
dc.contributor.author | Dauletbekova, Alma | |
dc.contributor.author | Junisbekova, Diana | |
dc.contributor.author | Kalytka, Valeriy | |
dc.contributor.author | Akilbekov, Abdirash | |
dc.contributor.author | Akylbekova, Aiman | |
dc.contributor.author | Baubekova, Guldar | |
dc.contributor.author | Aralbayeva, Gulnara | |
dc.contributor.author | Bazarbek, Assyl-Dastan | |
dc.contributor.author | Usseinov, Abay | |
dc.contributor.author | Popov, Anatoli I. | |
dc.date.accessioned | 2025-01-27T09:48:42Z | |
dc.date.available | 2025-01-27T09:48:42Z | |
dc.date.issued | 2024 | |
dc.identifier.issn | 1996-1944 | |
dc.identifier.other | doi.org/10.3390/ma17061226 | |
dc.identifier.uri | http://rep.enu.kz/handle/enu/21193 | |
dc.description.abstract | Electrochemical deposition into a prepared SiO2/Si-p ion track template was used to make orthorhombic SnO2 vertical nanowires (NWs) for this study. As a result, a SnO2 -NWs/SiO2/Si nanoheterostructure with an orthorhombic crystal structure of SnO2 nanowires was obtained. Photoluminescence excited by light with a wavelength of 240 nm has a low intensity, arising mainly due to defects such as oxygen vacancies and interstitial tin or tin with damaged bonds. The current–voltage characteristic measurement showed that the SnO2 -NWs/SiO2/Si nanoheterostructure made this way has many p-n junctions. | ru |
dc.language.iso | en | ru |
dc.publisher | Materials | ru |
dc.relation.ispartofseries | 17, 1226; | |
dc.subject | track technologies | ru |
dc.subject | SiO2/Si track template | ru |
dc.subject | electrochemical deposition | ru |
dc.subject | oxide semiconductors | ru |
dc.subject | nanowires | ru |
dc.subject | hybrid DFT calculations | ru |
dc.title | Synthesis of Orthorhombic Tin Dioxide Nanowires in Track Templates | ru |
dc.type | Article | ru |